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| NPN SILICON GENERAL PURPOSE TRANSISTOR FEATURES * LOW NOISE FIGURE: < 3 dB at 500 MHz * HIGH GAIN: 15 dB at 500 MHz * HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) * SMALL COLLECTOR CAPACITANCE: 1 pF * HIGH RELIABILITY METALLIZATION 30 (SOT 323 STYLE) NE734 SERIES 35 (MICRO-X) DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The NE73433 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 0.9 GHz Maximum Available Gain3 at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Insertion Power Gain at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Forward Current Gain Ratio at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 2 V, IC = 0 Collector to Base Capacitance4 at VCB = 10 V, IC = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Case) A A pF mW C/W 1.5 0.75 150 833 .55 UNITS GHz GHz dB dB dB dB dB dB MIN NE73430 2SC4185 30 TYP MAX MIN 1.5 2.3 2.1 4.0 17 18 13 16 9 100 200 0.1 0.1 1.5 250 550 3.5 NE73435 2SC2148 35 TYP 3.0 MAX NFMIN MAG |S21E|2 8 8 25 hFE 40 100 180 0.1 ICBO IEBO CCB PT RTH Notes: 1. Electronic Industrial Association of Japan. 2. Input and output are tuned for optimum noise figures. 3. Maximum Available Gain (MAG) is calculated MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| 4. CCB measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal. California Eastern Laboratories NE734 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA C C RATINGS 30 14 3 50 2002 -65 to +2003 NE73435 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (MHz) 500 1000 1500 2000 NFOPT (dB) 2.0 3.1 4.2 5.1 GA (dB) 16.1 11.2 9.2 7.1 OPT MAG 0.30 0.43 0.54 0.56 ANG 80 126 168 178 Rn/50 0.63 0.33 0.19 0.20 VCE = 10 V, IC = 3 mA Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Maximum Junction Temperature for the NE73430 is 150C. 3. Maximum Storage Temperature for the NE73430 and the NE73435 Grade D is 150C. VCE = 10 V, IC = 15 mA 500 1000 1500 2000 3.3 4.7 6.5 7.4 17.5 13.5 10.8 9.2 0.34 0.47 0.67 0.64 120 168 -174 -163 0.36 0.27 0.13 0.46 TYPICAL PERFORMANCE CURVES (TA = 25C) SATURATION VOLTAGE vs. COLLECTOR CURRENT 2 500 DC CURRENT GAIN vs. COLLECTOR CURRENT Collector to Emitter and Base to Emitter Saturation Voltage VCE (SAT), VBE (SAT) (V) VBE(SAT) 1 0.7 0.5 0.3 0.2 IC = 10XIB DC Forward Current Gain, hFE 300 200 VCE = 10 V 100 70 VCE = 1 V 50 30 20 0.1 0.07 0.05 0.03 0.02 0.1 0.2 0.5 1 2 5 10 20 50 VCE(SAT) 10 0.5 0.7 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 7 5 3 2 VCE = 10 V NE73435 Gain Bandwidth Product, fT (GHz) 1 0.7 0.5 0.3 0.2 0.1 0.5 0.7 1 2 3 57 10 20 30 50 Collector Current, IC (mA) NE734 SERIES TYPICAL PERFORMANCE CURVES (TA = 25C) NE73435 GAIN vs. FREQUENCY 32 VCE = 10 V IC = 30 mA NE73435 NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE = 10 V f = 500 MHz 5 MAG Noise Figure, NF (dB) 24 Gain, (dB) |S21E| 2 16 4 3 8 2 NE73435 TUNED 0 0.1 0.2 0.3 0.5 0.7 1 2 3 5 1 0.5 0.7 1 2 3 5 7 10 20 30 50 Frequency, f (GHz) Collector Current, IC (mA) ORDERING INFORMATION PART NUMBER NE73430-T1 NE73435 Note: 1. Embossed tape 12 mm wide. QUANTITY 3000 1 PACKAGING Tape & Reel ESD Bag NE734 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 90 0.8 0.6 0.4 3 4 0.2 5 10 20 50 10 20 -50 -20 S22 -0.2 S11 -3 -0.4 -2 -0.6 -0.8 -1 -1.5 -10 -5 -4 1 1.5 2 135 S21 45 S12 180 5.00 10.00 15.00 0.05 0.10 0.15 0 0.2 0.4 0.6 0.8 1 1.5 2 3 45 Coordinates in Ohms 225 Frequency in GHz (VCE = 10 V, IC = 20 mA) 315 20.00 270 NE73435 VCE = 10 V, IC = 3 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 2500 3000 4000 MAG 0.861 0.810 0.676 0.616 0.607 0.610 0.613 0.618 0.630 S11 ANG -28.4 -55.0 -115.5 -156.0 -175.1 171.3 160.0 149.5 128.9 MAG 6.880 6.206 4.323 2.494 1.709 1.317 1.071 0.896 0.647 S21 ANG 157.0 139.8 104.1 74.4 55.6 39.0 25.3 13.0 -8.4 MAG 0.026 0.047 0.070 0.085 0.095 0.107 0.118 0.132 0.170 S12 ANG 70.5 56.9 37.3 30.5 32.2 32.2 33.9 33.5 33.7 S22 MAG ANG 0.19 0.28 0.50 0.84 1.05 1.16 1.20 1.19 1.20 K MAG1 (dB) 24.2 21.2 17.9 14.7 11.2 8.5 6.9 5.7 3.1 0.960 -11.1 0.865 -19.2 0.689 -29.0 0.612 -38.3 0.612 -49.8 0.616 -62.2 0.632 -74.0 0.649 -87.3 0.657 -112.9 VCE = 10 V, IC = 5 mA 100 200 500 1000 1500 2000 2500 3000 4000 0.798 0.733 0.628 0.603 0.605 0.613 0.621 0.628 0.644 -39.0 -74.2 -134.4 -166.4 178.1 166.2 155.9 146.0 126.0 10.428 8.974 5.214 2.797 1.893 1.442 1.161 0.967 0.690 151.6 131.4 96.8 70.8 53.1 37.6 24.2 12.0 -9.3 0.025 0.040 0.056 0.073 0.088 0.102 0.117 0.133 0.176 66.2 52.9 37.4 37.1 39.9 39.9 41.0 40.6 39.2 0.923 -14.4 0.788 -22.4 0.613 -28.4 0.563 -36.6 0.572 -47.9 0.582 -60.5 0.604 -72.5 0.628 -85.9 0.639 -111.8 0.22 0.31 0.62 0.94 1.09 1.16 1.15 1.10 1.09 26.2 23.5 19.7 15.8 11.5 9.1 7.6 6.7 4.1 VCE = 10 V, IC = 10 mA 100 200 500 1000 1500 2000 2500 3000 4000 0.687 0.635 0.603 0.607 0.621 0.633 0.646 0.652 0.672 -62.0 -106.6 -153.4 -175.8 171.8 161.4 151.8 142.4 122.6 16.892 12.598 5.959 3.063 2.039 1.532 1.220 1.009 0.712 142.1 118.5 89.6 67.1 50.5 35.2 22.4 10.4 -10.1 0.020 0.031 0.042 0.061 0.080 0.096 0.112 0.132 0.182 59.4 48.8 42.9 47.2 48.7 48.3 48.3 47.9 44.2 0.846 -19.1 0.677 -24.6 0.541 -25.9 0.521 -33.7 0.541 -45.3 0.559 -58.0 0.586 -70.7 0.612 -84.2 0.627 -111.0 0.26 0.40 0.81 1.07 1.12 1.14 1.10 1.02 0.96 29.3 26.1 21.5 15.4 12.0 9.8 8.4 8.0 5.9 VCE = 10 V, IC = 20 mA 100 200 500 1000 1500 2000 2500 3000 4000 Note: 1. Gain Calculation: MAG = |S21| |S12| 0.584 0.594 0.613 0.632 0.650 0.666 0.678 0.686 0.699 -94.8 -134.2 -165.6 178.2 167.5 157.8 148.5 139.0 119.3 22.708 14.233 6.118 3.061 2.014 1.506 1.190 0.976 0.682 130.8 108.5 84.3 63.8 47.5 32.9 20.3 8.7 -11.2 0.015 0.023 0.034 0.054 0.072 0.089 0.108 0.132 0.190 57.7 48.1 51.7 53.6 55.5 55.1 56.1 55.3 49.2 0.761 -21.6 0.599 -23.0 0.515 -22.0 0.517 -30.8 0.545 -43.4 0.564 -56.8 0.594 -69.8 0.621 -83.9 0.634 -111.2 0.32 0.55 0.95 1.13 1.14 1.12 1.02 0.91 0.86 31.8 27.9 22.6 15.3 12.2 10.2 9.6 8.7 5.6 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain NE734 SERIES OUTLINE DIMENSIONS (Units in mm) OUTLINE 30 (SOT-323) 2.1 0.2 1.25 0.1 PACKAGE OUTLINE 30 RECOMMENDED P.C.B. LAYOUT 1.7 2 2.0 0.2 1.3 3 0.65 2 +0.1 0.3 -0.05 (ALL LEADS) 3 1 MARKING 1.3 0.15 1. Emitter 2. Base 3. Collector 0.65 0.6 1 0.8 0.9 0.1 0 to 0.1 +0.10 0.15 -0.05 PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.50.06 C B 45 E 2.550.2 +0.06 0.1 -0.04 2.1 1. Collector 2. Emitter 3. Base 4. Emitter 1.8 MAX 0.55 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM 06/21/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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